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30 10V 25 20 5.0V 4.5V
20 Vds=5V 15
Id (A)
4.0V 15 10 Vgs=3.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 5 25C
Id(A)
10
125C
0 2 2.5 3 3.5 4 4.5 Vgs(Volts) Figure 2: Transfer Characteristics 2
40 35
Normalized On-Resistance
Vgs =4.5V
1.8 1.6 1.4 1.2 1 0.8
Rds(on) (m:)
30 25 20 Vgs=10V 15 10 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Vgs=10V Id=6.6A
Vgs=4.5V Id=5.5A
0
25
50
75
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
80 Id=6.6A 60
1.0E+01 1.0E+00 1.0E-01 125C
Rds(on) (m:)
125C 40
Is (A)
1.0E-02 1.0E-03 25C
20 25C
1.0E-04 1.0E-05
0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts) Figure 6: Body-Diode Characteristics
10 Vds=40V Id= 6.6A
800
8
Capacitance (pF)
600 Ciss 400 Coss Crss 200
Vgs (Volts)
6
4
2 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 6 8 10 0 20 30 Vds (Volts) Figure 8: Capacitance Characteristics 10 40
0
100.0 Rds(on) limited 10Ps
40 Tj(max)=150C Ta=25C
30
Id (Amps)
10ms 1ms 1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s
Power (W)
10.0
100Ps
20
10
0 0.001
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

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